11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 1 . description thispowermosfetisproducedusingkiasemi`sadvancedsuper-junctiontechnology.this advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.thesedevices arewellsuitedforac/dcpowerconversioninswitchingmodeoperationforhigherefficiency. 2 . features n r ds(on) =0.38 ? @ v gs =10v n low gate charge ( typical 33nc ) n high ruggedness n fast switching n 100% avalanche tested n improved dv/dt capability 3. pinconfiguration 1of6 rev1.0jun2015 pin function 1 gate 2 drain 3 source 4 drain
11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 4. absolutemaximumratings (t c =25 o c,unlessotherwisenoted) parameter symbol rating units drain-sourcevoltage v dss 650 v gate-sourcevoltage v gss + 30 v draincurrentcontinuous t c =25 o c i d 11* a t c =100 o c 6.7* a draincurrentpulsed(note1) i dm 30* a avalancheenergy repetitive(note1) e ar 65 mj singlepulse(note2) e as 132 mj avalancheenergy(note1) i ar 2.1 a peakdioderecoverydv/dt(note3) dv/dt 5.0 v/ns totalpowerdissipation t c =25 o c p d 125 w derateabove25 o c 1.0 w/ o c operatingandstoragetemperaturerange t j, t stg -55~+150 o c maximum lead temperature for soldering purposes,1/8 fromcasefor5seconds t l 300 o c *draincurrentlimitedbymaximumjunctiontemperature 5. thermalcharacteristics parameter symbol rating unit thermalresistance,junction-ambient r thja 62 o c/w thermalresistance,case-to-sinktyp. r thjs 1.0 o c/w thermalresistance,junction-case r thjc 0.6 o c/w 2of6 rev1.0jun2015
11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 6 . electricalcharacteristics (t c =25 c,unlessotherwisenoted) parameter symbol conditions min typ max unit offcharacteristics drain-sourcebreakdownvoltage bv dss v gs =0v,i d =250 a 650 - - v zerogatevoltagedraincurrent i dss v ds =650v,v gs =0v - - 1 a v ds =480v,t c =125 o c - - 10 a gate-bodyleakagecurrent forward i gss v gs =30v,v ds =0v - - 100 na reverse v gs =-30v,v ds =0v - - -100 na breakdownvoltagetemperaturecoefficient bv dss / t j i d =250 a,referenced to25 c - 0.6 - v/ c oncharacteristics gatethresholdvoltage v gs(th) v ds =v gs ,i d =250 a 2.5 - 4.5 v staticdrain-sourceon-resistance r ds(on) v gs =10v,i d =5.5a - 0.38 0.42 forwardtransconductance g fs v ds =40v,i d =5.5a (note4) - 16 - s dynamiccharacteristics inputcapacitance c iss v ds =25v,v gs =0v, f=1mhz - 680 - pf outputcapacitance c oss - 140 - pf reversetransfercapacitance c rss - 5 - pf switchingcharacteristics turn-ondelaytime t d(on) v dd =400v,i d =5.5a, r g =20 (note4,5) - 26 - ns risetime t r - 60 - ns turn-offdelaytime t d(off) - 75 - ns falltime t f - 44 - ns totalgatecharge q g v ds =480v,i d =11a, v gs =10v(note4,5) - 33 - nc gate-sourcecharge q gs - 4 - nc gate-draincharge q gd - 4.2 - nc drain-sourcediodecharacteristicsandmaximumratings drain-sourcediodeforwardvoltage v sd v gs =0v,i sd =11a - - 1.5 v continuousdrain-sourcecurrent i s - - 11 a pulseddrain-sourcecurrent i sm - - 30 a reverserecoverytime t rr v gs =0v,i sd =4.9a dl f /dt=100a/ s (note4) - 270 - ns reverserecoverycharge q rr - 3.3 - c note:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.i as =2.1a,l=60mh,v dd =150v,r g =25 ,staringt j =25 o c 3.i sd < 10a,di/dt< 200a/ s,v dd < bv dss ,staringt j =25 o c 4.pulsetest:pulsewidth< 300 s,dutycycle< 2% 5.essentiallyindependentofoperatingtemperaturetypicalcharacteristics. 3of6 rev1.0jun2015
11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 7 . testcircuitsandwaveforms 4of6 rev1.0jun2015
11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 5of6 rev1.0jun2015
11a 650v n-channelmosfet kia semiconductors 65R420 kia semiconductors kia semiconductors 6of6 rev1.0jun2015
|
